MS2472 applications equivalent, rf & microwave transistors avionics applications.
DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS www.DataSheet4U.com
* 600 W (typ.) IFF 1030
– 1090 MHz
* 550 W (min.) DME 1025
&.
Features
DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS www.DataSheet4U.com
* 600 W (typ.) IFF 1030
&n.
The MS2472 is a hermetically sealed, gold metallized, silicon NPN power transistor. The MS2472 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The MS2472 is internal input/output matched resulting in i.
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